器件名称:
FDS4770_04
功能描述:
40V N-Channel PowerTrench?MOSFET
文件大小:
106.37KB 共6页
简 介:
May 2004 FDS4770 FDS4770 40V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features 13.2 A, 40 V. RDS(ON) = 7.5 m @ VGS = 10 V Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications DC/DC converter D D D D SO-8 DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 40 ± 20 (Note 1a) Units V V A W 13.2 45 2.5 1.4 1.2 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS4770 Device FDS4770 Reel Size 13’’ Tape width 11mm Quantity 2500 units 2004 Fairchild Semiconductor Corporation FDS4770 Rev C(W) FDS4770 Electrical Characteristics Symbol EAS IAS TA = 25°C unless otherwise noted Parameter Drain-……
