器件名称:
FDS4897C
功能描述:
Dual N & P-Channel PowerTrench MOSFET
文件大小:
159.97KB 共9页
简 介:
FDS4897C Dual N & P-Channel PowerTrench MOSFET November 2005 FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Features Q1: N-Channel RDS(on) = 29mΩ @ VGS = 10V RDS(on) = 36mΩ @ VGS = 4.5V Q2: P-Channel –4.4A, –40V RDS(on) = 46mΩ @ VGS = –10V RDS(on) = 63mΩ @ VGS = –4.5V High power handling capability in a widely used surface mount package RoHS compliant 6.2A, 40V Application Inverter Power Supplies D1 D D1 D DD2 D2 D Q2 5 6 Q1 4 3 2 1 SO-8 Pin 1 SO-8 G1 S1 S G2 S2 G 7 8 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage TA = 25°C unless otherwise noted Parameter Q1 40 ±20 (Note 1a) Q2 40 ±20 –4.4 –20 2 1.6 1 0.9 –55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain Current 6.2 20 (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS4897C 2005 Fairchild Semiconductor Corporation FDS4897C Rev C(W) Device FD……
