器件名称:
FDS6574A_08
功能描述:
20V N-Channel PowerTrench MOSFET
文件大小:
401.02KB 共5页
简 介:
FDS6574A May 2008 FDS6574A 20V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. tmM Features 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 V RDS(ON) = 7 m @ VGS = 2.5 V RDS(ON) = 9 m @ VGS = 1.8 V Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications DC/DC converter RoHS Compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Gate-Source Voltage Drain Current – Continuous – Pulsed Drain-Source Voltage TA=25oC unless otherwise noted Parameter Ratings 20 ±8 (Note 1a) Units V V A W 16 80 2.5 1.2 1.0 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6574A Device FDS6574A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2008 Fairchild Semiconductor Corporation FDS6574A Rev B2(W) FDS6574A Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) TA = 25……
