器件名称:
FDS6609A
功能描述:
P-Channel Logic Level PowerTrench MOSFET
文件大小:
646.28KB 共8页
简 介:
FDS6609A April 2000 PRELIMINARY FDS6609A P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features –6.3 A, –30 V . RDS(ON) = 0.032 @ V GS = -10 V RDS(ON) = 0.05 @ V GS = -4.5 V Low gate charge Fast switching speed High performance trench technology for extremely low RDS(ON) High power and current handling capability Applications DC/DC converter Load switch Motor Drive D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA =25oC unless otherwise noted Parameter Ratings –30 ±20 (Note 1a) Units V V A W -6.3 -40 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6609A Device FDS6609A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2000 Fairchild Semicon……
