器件名称:
FDS6612A
功能描述:
Single N-Channel, Logic Level, PowerTrenchTM MOSFET
文件大小:
246.99KB 共8页
简 介:
July 1998 FDS6612A Single N-Channel, Logic Level, PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 8.4 A, 30 V. RDS(ON) = 0.022 @ VGS = 10 V, RDS(ON) = 0.030 @ VGS = 4.5 V. Fast switching speed. Low gate charge. High performance trench technology for extremely low RDS(ON). High power and current handling capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D D D D 5 4 3 2 1 S F D 2A 1 66 S S S G 6 7 8 SO-8 pin 1 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless otherwise noted FDS6612A Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) 30 ±20 8.4 40 2.5 1.2 1 -55 to 150 V V A W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W FDS6612A Rev.C1 1998 Fairchild Semiconductor Corporation Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Uni……
