器件名称:
FDS6614A
功能描述:
N-Channel Logic Level PowerTrench MOSFET
文件大小:
275.19KB 共8页
简 介:
FDS6614A January 2000 FDS6614A N-Channel Logic Level PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 9.3 A, 30 V. RDS(on) = 0.018 W @ VGS = 10 V RDS(on) = 0.025 W @ VGS = 4.5 V. Low gate charge (12nC typical). Fast switching speed. High performance trench technology for extremely low RDS(on). High power and current handling capability. Applications DC/DC converter Load switch Motor drives D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ± 20 (Note 1a) Units V V A W 9.3 40 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6614A 1999 Fairchild Semiconductor Corporation Device FDS6614A Reel Size 13’’ Tape width 12m……
