器件名称:
FDS6644
功能描述:
30V N-Channel PowerTrench MOSFET
文件大小:
79.06KB 共5页
简 介:
FDS6644 September 2001 FDS6644 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features 13 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V RDS(ON) = 10.5 m @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) Low gate charge (25 nC typical) High power and current handling capability Applications DC/DC converter D D D D SO-8 DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25 C unless otherwise noted o 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ±16 (Note 1a) Units V V A W 13 52 2.5 1.4 1.2 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS6644 Device FDS6644 Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDS6644 Rev A (W) FDS6644 PRELIMI NARY 4/FDU664 Electrical Character……
