器件名称:
FDS6670A_03
功能描述:
Single N-Channel, Logic Level, PowerTrench MOSFET
文件大小:
138.39KB 共5页
简 介:
FDS6670A June 2003 FDS6670A Single N-Channel, Logic Level, PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 13 A, 30 V. RDS(ON) = 8 m @ VGS = 10 V RDS(ON) = 10 m @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability D D D D SO-8 DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G G S S S S S S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ±20 (Note 1a) Units V V A W °C 13 50 2.5 1.0 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) 50 125 25 °C/W Package Marking and Ordering Information Device Marking FDS6670A Device FDS6670A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2003 Fairchild Semiconductor Corporation ……
