器件名称:
FDS6670AS_08
功能描述:
30V N-Channel PowerTrench
文件大小:
748.23KB 共7页
简 介:
FDS6670AS 30V N-Channel PowerTrench SyncFET May 2008 tm FDS6670AS 30V N-Channel PowerTrench SyncFET General Description The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6670AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features 13.5 A, 30 V. RDS(ON) max= 9.0 m @ VGS = 10 V RDS(ON) max= 11.5 m @ VGS = 4.5 V Includes SyncFET Schottky body diode Low gate charge (27nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability RoHS Compliant Applications DC/DC converter Low side notebook D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±20 (Note 1a) Units V V A W 13.5 50 2.5 1.2 1 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6670AS Device FDS6670AS Reel Size 13’’ Tape width 12mm Quantity 25……
