器件名称:
FDS6672
功能描述:
30V N-Channel PowerTrench MOSFET
文件大小:
205.47KB 共8页
简 介:
FDS6672A February 2000 PRELIMINARY FDS6672A 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features 12.5 A, 30 V. RDS(ON) = 8 m @ VGS = 10 V RDS(ON) = 9.5 m @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) Low gate charge (33 nC typical) High power and current handling capability Applications DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±12 (Note 1a) Units V V A W 12.5 50 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6672A Device FDS6672A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2000 Fairchild Semiconductor Corporation FDS6672A Rev B(W) FDS6672A Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter ……
