器件名称:
FDS6675BZ
功能描述:
P-Channel PowerTrench MOSFET -30V, -11A, 13mOhm
文件大小:
360.25KB 共6页
简 介:
FDS6675BZ P-Channel PowerTrench MOSFET January 2006 FDS6675BZ P-Channel PowerTrench MOSFET -30V, -11A, 13m General Description This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features Max rDS(on) = 13m at VGS = -10V, ID = -11A Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9A Extended VGS range (-25V) for battery applications HBM ESD protection level of 5.4 KV typical (note 3) High performance trench technology for extremely low rDS(on) High power and current handing capability RoHS Compliant Features D D 5 6 4 3 2 1 D D SO-8 S S S G 7 8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Operating and Storage Temperature Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings -30 ±25 -11 -55 2.5 1.2 1.0 -55 to 150 °C W Units V V A Thermal Characteristics RθJA RθJC Thermal Resistance , Junction to Ambient (Note 1a) Thermal Resistance , Junction to Case (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6675BZ Device FDS6675BZ Reel Size 13’’ Tape Width 12mm Quantity 2500 units 2006 Fairchild Semiconductor Corporation FDS66……
