器件名称:
FDS6676AS
功能描述:
30V N-Channel PowerTrench SyncFET
文件大小:
542.88KB 共8页
简 介:
FDS6676AS 30V N-Channel PowerTrench SyncFET April 2005 FDS6676AS 30V N-Channel PowerTrench SyncFET Features ■ 14.5 A, 30 V. RDS(ON) max= 6.0 m @ VGS = 10 V RDS(ON) max= 7.25 m @ VGS = 4.5 V ■ Includes SyncFET Schottky body diode ■ Low gate charge (45nC typical) ■ High performance trench technology for extremely low RDS(ON) and fast switching ■ High power and current handling capability General Description The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efciency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Applications ■ DC/DC converter ■ Low side notebook D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG RθJA RθJC Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings 30 ±20 14.5 50 2.5 1.2 1 –55 to +150 Units V V A W °C °C/W °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 Package Marking and Ordering Information Device Marking FDS6676AS FDS6676AS Device FDS6676AS FDS6676AS_NL (Note 3) Reel Size 13’’ 13’’ Ta……
