器件名称:
FDS6680
功能描述:
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET
文件大小:
238.91KB 共8页
简 介:
April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features 11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 V RDS(ON) = 0.015 @ VGS = 4.5 V. Optimized for use in switching DC/DC converters with PWM controllers. Very fast switching. Low gate charge (typical Qg = 19 nC). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 5 6 7 8 4 3 2 1 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless other wise noted FDS6680 Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) (Note 1a) 30 ±20 11.5 50 2.5 1.2 1 -55 to 150 V V A W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W FDS6680 Rev.E1 1998 Fairchild Semiconductor Corporation Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbo……
