器件名称:
FDS6898A
功能描述:
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
文件大小:
81KB 共5页
简 介:
FDS6898A OCTOBER 2001 FDS6898A Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 9.4 A, 20 V RDS(ON) = 14 m @ VGS = 4.5 V RDS(ON) = 18 m @ VGS = 2.5 V Low gate charge (16 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ± 12 (Note 1a) Units V V A W 9.4 38 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1 0.9 –55 to +150 °C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6898A Device FDS6898A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fai……
