器件名称:
FDS6900AS
功能描述:
Dual N-Ch PowerTrench SyncFET
文件大小:
183.99KB 共10页
简 介:
FDS6900AS May 2005 FDS6900AS General Description Dual N-Ch PowerTrench SyncFET Features Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) = 22m @ VGS = 10V RDS(on) = 28m @ VGS = 4.5V Q1: Optimized for low switching losses Low Gate Charge (11nC typical) RDS(on) = 27m @ VGS = 10V RDS(on) = 34m @ VGS = 4.5V 100% RG (Gate Resistance) Tested The FDS6900AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. 8.2A, 30V 6.9A, 30V S1D2 D S1D2 D S1D2 D G1 D 1 2 3 Q2 Q1 8 7 6 5 Dual N-Channel SyncFet SO-8 Pin 1 SO- D1 D1 S S2 G2 G 4 S S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage TA = 25°C unless otherwise noted Parameter Q2 30 (Note 1a) Q1 30 ±20 6.9 20 2 1.6 1 0.9 –55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain Current ±20 8.2 30 (Note 1a) (Note 1b) (Note 1c) ……
