器件名称:
FDS6912A
功能描述:
Dual N-Channel Logic Level PowerTrench MOSFET
文件大小:
121.37KB 共5页
简 介:
FDS6912A July 2003 FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V RDS(ON) = 35 m @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ± 20 (Note 1a) Units V V A W 6 20 1.6 1.0 0.9 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6912A Device FDS6912A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2003 Fairchild Semiconductor Corporation FDS6912A Rev D(W) ……