器件名称:
FDS6930B
功能描述:
Dual N-Channel Logic Level PowerTrench MOSFET
文件大小:
532.92KB 共5页
简 介:
FDS6930B Dual N-Channel Logic Level PowerTrench MOSFET June 2005 FDS6930B Dual N-Channel Logic Level PowerTrench MOSFET Features ■ 5.5 A, 30 V. ■ ■ ■ ■ RDS(ON) = 38 m @ VGS = 10 V RDS(ON) = 50 m @ VGS = 4.5 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(ON) High power and current handling capability General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D2 D1 D1 D2 5 6 4 3 2 1 SO-8 Pin 1 S1 G1 S2 G2 7 8 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b) (Note 1c) TJ, TSTG RθJA RθJC Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings 30 ± 20 5.5 20 2 1.6 1 0.9 –55 to 150 Units V V A W °C °C/W °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 Package Marking and Ordering Information Device Marking FDS6930B Device FDS6930B Reel Size 13" Tape width 12mm Quantity 2500……
