器件名称:
FDS6961
功能描述:
Dual N-Channel Logic Level PowerTrenchTM MOSFET
文件大小:
241.1KB 共8页
简 介:
April 1999 FDS6961A Dual N-Channel Logic Level PowerTrenchTM MOSFET General Description Features 3.5 A, 30 V. RDS(ON) = 0.090 @ VGS = 10 V RDS(ON) = 0.140 @ VGS = 4.5 V. Fast switching speed. Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability. These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. SOT-23 SuperSOTTM -6 SuperSOTTM -8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 S FD 1A 6 69 S2 G2 5 6 7 4 3 2 1 SO-8 pin 1 S1 G1 8 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless other wise noted Ratings Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation Power Dissipation for Single Operation (Note 1) (Note 1a) (Note 1b) (Note 1c) (Note 1a) 30 ±20 3.5 14 2 1.6 1 0.9 -55 to 150 V V A W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W FDS6961A Rev.C 1999 Fairchild Semiconductor Corporation Electrical Characteristics Symbol……
