器件名称:
FDS6982AS
功能描述:
Dual Notebook Power Supply N-Channel PowerTrench SyncFET
文件大小:
168.12KB 共10页
简 介:
FDS6982AS March 2005 FDS6982AS General Description Dual Notebook Power Supply N-Channel PowerTrench SyncFET Features Q2: Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) max= 13.5m @ VGS = 10V RDS(on) max= 16.5m @ VGS = 4.5V Low gate charge (21nC typical) Q1: Optimized for low switching losses RDS(on) max= 22.0m @ VGS = 10V RDS(on) max= 29.0m @ VGS = 4.5V Low gate charge (11nC typical) The FDS6982AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. 8.6A, 30V 6.3A, 30V Applications Notebook D1 D1 D2 D2 S1 G1 5 6 7 Q1 4 3 2 Q2 SO-8 S2 8 1 G2 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage TA = 25°C unless otherwise noted Parameter Q2 30 (Note 1a) Q1 30 ±20 6.3 20 2 1.6 1 0.9 –55 to +150 Units V V A W - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Drain Current ±20 8.6 30 (Note 1a) (Note 1……
