器件名称:
FDS9412A
功能描述:
N-Channel PowerTrench MOSFET 30V, 8A, 21mOhm
文件大小:
325.61KB 共6页
简 介:
FDS9412A N-Channel PowerTrench MOSFET February 2006 FDS9412A N-Channel PowerTrench MOSFET 30V, 8A, 21m General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switiching PWM controllers. It has been optimized for low gate charge ,low rDS(on) and fast switching speed. Features Max rDS(on) = 21m at VGS = 10V, ID = 8A Max rDS(on) = 25m at VGS = 4.5V, ID = 6.6A Low gate charge RoHS Compliant Application DC/DC converters D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (TA = 25°C, VGS = 10V, RθJA = 50°C/W ) -Continuous (TA = 25°C, VGS = 4.5V, RθJA = 50°C/W ) -Pulsed Single Pulse Avalanche Energy Power dissipation Operating and Storage Temperature (Note 3) Ratings 30 ±20 8 6.6 30 54 2.5 -55 to 150 A mJ W °C Units V V A Thermal Characteristics RθJC RθJA Thermal Resistance , Junction to Case Thermal Resistance , Junction to Ambient (Note 1) (Note 1a) 25 50 °C/W °C/W Package Marking and Ordering Information Device Marking FDS9412A Device FDS9412A Package SO-8 Reel Size 330mm Tape Width 12mm Quantity 2500 units 2006 Fairchild Semiconductor Corporation FDS9412A Rev. A1 1 www.fairchildsemi.com FDS9412A N-Channel PowerTrench MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Sy……
