器件名称:
FF800R12KF4
功能描述:
IGBT-CONVERTER
文件大小:
157.92KB 共4页
简 介:
European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 11,85 55,2 M8 31,5 130 114 E1 C2 C1 E2 E1 G1 C1 C2 E2 G2 M4 28 7 2,5 deep 40 53 16 18 44 57 2,5 deep E1 E1 C2 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prüfspannung Hchstzulssige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties collector-emitter voltage DC-collector current repetitive peak collctor current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current insulation test voltage collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (restistive load) storage time (inductive load) fall time (inductive load) turn-on energy loss per pulse turn-off energy loss per pulse tp=1 ms tC=25°C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. iC=800A, vGE=15V, Tvj=25°C iC=800A, vGE=15V, Tvj=125°C iC=32mA, vCE=vGE, Tvj=25°C fO=1MHz,Tvj=25°C,vCE=25V, vGE=0V vCE=1200V, vGE=0V, Tvj=25°C vCE=1200V, vGE=0V, Tvj=125°C vCE=0V, vGE=20V, Tvj=25°C vCE=0V, vEG=20V, Tvj=25°C iC=800A,vCE=600V,vLF=±15V,RG=1,2 vLF=15V, Tvj= 25°C vLF=15V, Tvj= 125°C iC=800A,vCE=600V,vLF=±15V,RG=1,2 vLF=15V, T……
