器件名称:
EM428M1644RTA-5F
功能描述:
128Mb (2M
文件大小:
338.8KB 共20页
简 介:
eorex Features Internal Double-Date-Rate architecture with 2 Accesses per clock cycle. VDD/VDDQ= 2.5V ±0.2V for (-75 and -6) VDD/VDDQ= 2.6V ±0.1V for (-5 ) 2.5V SSTL-2 compatible I/O Burst Length (B/L) of 2, 4, 8 2,2.5,3 Clock read latency Bi-directional,intermittent data strobe(DQS) All inputs except data and DM are sampled at the positive edge of the system clock. Data Mask (DM) for write data Sequential & Interleaved Burst type available Auto Precharge option for each burst accesses DQS edge-aligned with data for Read cycles DQS center-aligned with data for Write cycles DLL aligns DQ & DQS transitions with CLK’s Auto Refresh and Self Refresh 4,096 Refresh Cycles / 64ms EM428M1644RTA 128Mb (2M×4Bank×16) Double DATA RATE SDRAM Description The EM428M1644RTA is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 134,217,728 bits which organized as 2Meg words x 4 banks by 16 bits. The 128Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path internally prefetches multiple bits and It transfers the datafor both rising and falling edges of the system clock.It means the doubled data bandwidth can be achieved at the I/O pins. Available packages:TSOPII 66P 400mil. Ordering Information Part No EM428M1644RTA-75F EM428M1644RTA-6F EM428M1644RTA-5F Organization 8M X 16 8M X 16 8M X 16 Max. Freq 133MHz @CL2.5 166MHz @CL2.5 200MHz @CL3 Package 66pin TSOP(ll) 66pin TSOP(ll) 66pin ……
