器件名称:
EM42AM1684RBA-75F
功能描述:
256Mb (4M
文件大小:
294.01KB 共19页
简 介:
eorex Features Preliminary EM42AM1684RBA 256Mb (4M×4Bank×16) Double DATA RATE SDRAM Description The EM42AM1684RBA is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 268,435,456 bits which organized as 4Meg words x 4 banks by 16 bits. The 256Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path internally prefetches multiple bits and It transfers the datafor both rising and falling edges of the system clock.It means the doubled data bandwidth can be achieved at the I/O pins. Available packages: FBGA-60B(12mmx10mm). Internal Double-Date-Rate architecture with 2 Accesses per clock cycle. Single 2.5V ±0.2V Power Supply 2.5V SSTL-2 compatible I/O Burst Length (B/L) of 2, 4, 8 2,2.5,3 Clock read latency Bi-directional,intermittent data strobe(DQS) All inputs except data and DM are sampled at the positive edge of the system clock. Data Mask (DM) for write data Sequential & Interleaved Burst type available Auto Precharge option for each burst accesses DQS edge-aligned with data for Read cycles DQS center-aligned with data for Write cycles DLL aligns DQ & DQS transitions with CLK transition Auto Refresh and Self Refresh 8,192 Refresh Cycles / 64ms Ordering Information Part No EM42AM1684RBA-75F EM42AM1684RBA-6F Organization 16M X 16 16M X 16 Max. Freq 133MHz/DDR266 @CL3 166MHz/DDR333 @CL3 Package BGA-60B BGA-60B Grade Commercial Commercial Pb Free Free * EOREX reserv……
