器件名称:
EM42AM3284LBA-7FE
功能描述:
512Mb (4M
文件大小:
667.28KB 共20页
简 介:
eorex Features Internal Double-Date-Rate architecture with 2 Accesses per clock cycle. 1.8V ±0.1V VDD/VDDQ 1.8V LV-COMS compatible I/O Burst Length (B/L) of 2, 4, 8, 16 3 Clock read latency Bi-directional,intermittent data strobe(DQS) All inputs except data and DM are sampled at the positive edge of the system clock. Data Mask (DM) for write data Sequential & Interleaved Burst type available Auto Precharge option for each burst accesses DQS edge-aligned with data for Read cycles DQS center-aligned with data for Write cycles No DLL;CK to DQS is not synchronized Deep power down mode Partial Array Self-Refresh(PASR) Auto Temperature Compensated Self-Refresh (TCSR) by built-in temperature sensor Auto Refresh and Self Refresh 8,192 Refresh Cycles / 64ms EM42AM3284LBA 512Mb (4M×4Bank×32) Double DATA RATE SDRAM Description The EM42AM3284LBA is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 4Meg words x 4 banks by 32 bits. The 512Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path internally prefetches multiple bits and It transfers the datafor both rising and falling edges of the system clock.It means the doubled data bandwidth can be achieved at the I/O pins. Available packages:TFBGA-90B(13mmx11mm). Ordering Information Part No EM42AM3284LBA-75F Organization 16M X 32 Max. Freq 133MHz/DDR266 @CL3 Package TFBGA-90B Grade Commer……
