器件名称:
EM42BM1684RTA
功能描述:
512Mb (8M
文件大小:
283.25KB 共19页
简 介:
eorex Features Internal Double-Date-Rate architecture with 2 Accesses per clock cycle. Single 2.5V ±0.2V Power Supply 2.5V SSTL-2 compatible I/O Burst Length (B/L) of 2, 4, 8 2,2.5,3 Clock read latency Bi-directional,intermittent data strobe(DQS) All inputs except data and DM are sampled at the positive edge of the system clock. Data Mask (DM) for write data Sequential & Interleaved Burst type available Auto Precharge option for each burst accesses DQS edge-aligned with data for Read cycles DQS center-aligned with data for Write cycles DLL aligns DQ & DQS transitions with CLK transition Auto Refresh and Self Refresh 8,192 Refresh Cycles / 64ms EM42BM1684RTA 512Mb (8M×4Bank×16) Double DATA RATE SDRAM Description The EM42BM1684RTA is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 536,870,912 bits which organized as 8Meg words x 4 banks by 16 bits. The 512Mb DDR SDRAM uses a double data rate architecture to accomplish high-speed operation. The data path internally prefetches multiple bits and It transfers the datafor both rising and falling edges of the system clock.It means the doubled data bandwidth can be achieved at the I/O pins. Available packages:TSOPII 66P 400mil. Ordering Information Part No EM42BM1684RTA-75F EM42BM1684RTA-6F EM42BM1684RTA-5F Organization 32M X 16 32M X 16 32M X 16 Max. Freq 133MHz @CL25 166MHz @CL25 200MHz @CL3 Package 66pin TSOP(ll) 66pin TSOP(ll) 66pin TSOP(ll) Grade Commercial Co……
