器件名称:
EM565168BC-70/70G
功能描述:
512K x 16 Pseudo SRAM
文件大小:
122.01KB 共12页
简 介:
EtronTech Rev 1.0 Features Organized as 512K words by 16 bits Fast Cycle Time : 55ns, 70ns Standby Current : 100uA Deep power-down Current : 10uA (Memory cell data invalid) Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) Compatible with low power SRAM Single Power Supply Voltage : 3.0V±0.3V Package Type : 48-ball FBGA, 6x8mm Lead Free Package available - EM565168BC-XXG, (G : indicates Lead Free Package) EM565168 512K x 16 Pseudo SRAM Sep. 2003 Pin Assignment 48-Ball BGA, Top View 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C D DQ9 DQ10 A5 A6 DQ1 DQ2 VSS DQ11 A17 A7 DQ3 VCC Pin Description Symbol A0 – A18 DQ0 – DQ15 CE1# CE2 OE# WE# LB# UB# VCC VSS Function Address Inputs Data Inputs/Outputs Chip Enable Deep Power Down Output Enable Write Control Lower Byte Control Upper Byte Control Power Supply Ground E VCC DQ14 DQ12 DQ13 NC A14 A16 A15 DQ4 DQ5 VSS DQ6 F G H DQ15 NC A12 A13 WE# DQ7 A18 A8 A9 A10 A11 NC Ordering Information Part Number EM565168BC-55/55G EM565168BC-70/70G Speed 55 ns 70 ns Package 6x8 BGA; G: lead free 6x8 BGA; G: lead free Overview The EM565168 is a 8M-bit Pseudo SRAM organized as 512K words by 16 bits. It is designed with advanced CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration. This device operates from a single power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low……
