器件名称:
EM566169BC-65
功能描述:
1M x 16 Pseudo SRAM
文件大小:
130.15KB 共15页
简 介:
EtronTech Features Organized as 1M words by 16 bits Fast Cycle Time : 60/65/70/85ns Fast Page Cycle Time : 18/20/25/30ns Page Read Operation by 8 words Standby Current(ISB1): 100uA Deep power-down Current : 10uA (Memory cell data invalid) Byte data control: LB# (DQ0 - 7), UB# (DQ8 - 15) Compatible with low power SRAM Single Power Supply Voltage : 3.0V±0.3V Package Type : 48-ball FBGA, 6x8mm EM566169BC 1M x 16 Pseudo SRAM Rev 0.6 Apr. 2004 Pad Assignment 1 2 3 4 5 6 A LB# OE# A0 A1 A2 CE2 B DQ8 UB# A3 A4 CE1# DQ0 C DQ9 DQ10 A5 A6 DQ1 DQ2 D VSS DQ11 A17 A7 DQ3 VCC Ordering Information Part Number EM566169BC-60/65/70/85 E VCC DQ12 NC A16 DQ4 VSS Speed(ns) 60/65/70/85 F DQ14 DQ13 A14 A15 DQ5 DQ6 Pin Description Symbol A0 – A19 DQ0 – DQ15 CE1# CE2 OE# WE# LB# UB# VCC/VCCQ VSS/VSSQ Function Address Inputs Data Inputs/Outputs Chip Enable Standby Mode Output Enable Write Control Lower Byte Control Upper Byte Control Power Supply Ground G DQ15 A19 A12 A13 WE# DQ7 H A18 A8 A9 A10 A11 NC Overview The EM566169 is a 16M-bit Pseudo SRAM organized as 1M words by 16 bits. It is designed with advanced CMOS technology specified RAM featuring low power static RAM compatible function and pin configuration. This device operates from a single power supply. Advanced circuit technology provides both high speed and low power. It is automatically placed in low-power mode when CE1# or both UB# and LB# are asserted high or CE2 is ass……
