器件名称:
EM6112K800WSA-45IF
功能描述:
512Kx8 LP SRAM
文件大小:
316.5KB 共13页
简 介:
512Kx8 LP SRAM EM6112K800V Series GENERAL DESCRIPTION The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as 524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6112K800V is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The EM6112K800V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible FEATURES z z Fast access time: 45/55/70ns Low power consumption: Operating current: 40/30/20mA (TYP.) Standby current: -L/-LL version 20/2A (TYP.) Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible z z z z Fully static operation Tri-state output Data retention voltage: 1.5V (MIN.) Package: 32-pin 450 mil SOP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 36-ball 6mm x 8mm TFBGA z z FUNCTIONAL BLOCK DIAGRAM Vcc Vss A0-A18 DECODER 512Kx8 MEMORY ARRAY DQ0-DQ7 I/O DATA CURCUIT COLUMN I/O CE# WE# OE# CONTROL CIRCUIT PIN DESCRIPTION SYMBOL A0 - A18 DQ0 – DQ7 CE# WE# OE# Vcc Vss DESCRIPTION Address Inputs Data Inputs/Outputs Enable Input Write Enable Input Output Enable Input Power Supply Ground 1 DCC-SR-041005-A 512Kx8 LP SRAM EM6112K800V Series PIN CONFIGURATION SOP A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 Vss TSOP-I/STSOP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 ……
