器件名称:
EM6128K800VSA-35IF
功能描述:
128Kx8 LP SRAM
文件大小:
372.45KB 共14页
简 介:
128Kx8 LP SRAM EM6128K800V Series GENERAL DESCRIPTION The EM6128K800V is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The EM6128K800V is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The EM6128K800V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are fully TTL compatible FEATURES z z Fast access time: 35/55/70ns Low power consumption: Operating current: 12/10/7mA (TYP.) Standby current: -L/-LL version 20/1A (TYP.) Single 2.7V ~ 3.6V power supply All inputs and outputs TTL compatible Fully static operation z z z Tri-state output Data retention voltage: 1.5V (MIN.) Package: 32-pin 450 mil SOP 32-pin 600 mil P-DIP 32-pin 8mm x 20mm TSOP-I 32-pin 8mm x 13.4mm STSOP 36-ball 6mm x 8mm TFBGA z z z FUNCTIONAL BLOCK DIAGRAM Vcc Vss A0-A16 DECODER 128Kx8 MEMORY ARRAY DQ0-DQ7 I/O DATA CURCUIT COLUMN I/O CE# WE# OE# CE2 CONTROL CIRCUIT PIN DESCRIPTION SYMBOL A0 - A16 DQ0 – DQ7 CE#, CE2 WE# OE# Vcc Vss DESCRIPTION Address Inputs Data Inputs/Outputs Enable Input Write Enable Input Output Enable Input Power Supply Ground 1 DCC-SR-041004-A 128Kx8 LP SRAM EM6128K800V Series PIN CONFIGURATION SOP/P-DIP A4 A3 A2 A1 A0 CE# DQ0 DQ1 DQ2 DQ3 Vcc Vss DQ4 DQ5 DQ6 DQ7 TSOP-I/STSOP……
