器件名称:
EM669325BG-8G
功能描述:
4M x 32 Low Power SDRAM (LPSDRAM)
文件大小:
598.12KB 共51页
简 介:
EtronTech Features Clock rate: 133/125/100 MHz Fully synchronous operation Internal pipelined architecture Four internal banks (1M x 32bit x 4bank) Programmable Mode - CAS# Latency: 1, 2 & 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential & Interleave - Burst-Read-Single-Write Burst stop function Individual byte controlled by DQM0-3 Auto Refresh and Self Refresh EM669325 Preliminary (Rev 0.6 Sep./2003) 4096 refresh cycles/64ms Single 3.0V, or 3.3V power supply Interface: LVTTL Package : 90 ball-FBGA, 11x13mm, Lead Free 4M x 32 Low Power SDRAM (LPSDRAM) Ordering Information Part Number EM669325BG-7.5G EM669325BG-8G (*) (*) (*) Frequency 133MHz 125MHz Package 11x13 BGA 11x13 BGA 11x13 BGA EM669325BG-1H/LG 100MHz (*) : G indicates Lead free package Pin Assignment : Top View 1 2 3 4 5 6 7 8 9 A B C D E F G H J K L M DQ26 DQ28 VSSQ VSSQ VDDQ VSS A4 A7 CLK DQM1 VDDQ VSSQ VSSQ DQ11 DQ13 DQ24 VDDQ DQ27 DQ29 DQ31 DQM3 A5 A8 CKE NC DQ8 DQ10 DQ12 VDDQ DQ15 VSS VSSQ DQ25 DQ30 NC A3 A6 NC A9 NC VSS DQ9 DQ14 VSSQ VSS VDD VDDQ DQ22 DQ17 NC A2 A10 NC BA0 CAS# VDD DQ6 DQ1 VDDQ VDD DQ23 VSSQ DQ20 DQ18 DQ16 DQM2 A0 BA1 CS# WE# DQ7 DQ5 DQ3 VSSQ DQ0 DQ21 DQ19 VDDQ VDD1Q VSSQ VDD A1 A11 RAS# DQM0 VSSQ VDDQ VDDQ DQ4 DQ2 N P R Etron Technology, Inc. No. 6, Technology Rd. V, Science-Based Industrial Park, Hsinchu, Taiwan 30077, R.O.C TEL: (886)-3-5782345 FAX: (886)-3-5778671 Etron Technology, Inc., reserves the right to make changes to its products and specificat……
