器件名称:
FZT956
功能描述:
PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
文件大小:
115.15KB 共5页
简 介:
SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS FZT955 FZT956 C ISSUE 2 OCTOBER 1995 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps E C B PARTMARKING DETAILS DEVICE TYPE IN FULL COMPLEMENTARY TYPES FZT955 - FZT855 FZT956 - N/A ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range VCEO VEBO ICM IC Ptot Tj:Tstg -10 -4 3 -55 to +150 VCBO SYMBOL FZT955 -180 -140 -6 -5 -2 FZT956 -220 -200 UNIT V V V A A W °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 284 FZT955 TYPICAL CHARACTERISTICS 1.6 1.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC/IB=10 1.6 IC/IB=50 Tamb=25°C -55°C +25°C +175°C FZT955 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) MAX. V IC=-100 A IC=-1 A, RB ≤ 1k 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. IC/IB=10 Collector-Base Breakdown Voltage V V V IE=-100 A VCB=-150V VCB=-150V,Tamb=100°C IC - Collector Current (Amps) V(BR)CBO -180 -210 Collector-Emitter Breakdown Voltage IC=-10mA* V(BR)CER -180 -210 VCE(sat) - (Volts) Collector-Emitter Breakdown Voltage Emitter-Base Break……
