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G10342-54

器件名称: G10342-54
功能描述: InGaAs PIN photodiode with preamp
文件大小: 219.39KB 共2页
生产厂商: HAMAMATSU
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简  介: PHOTODIODE InGaAs PIN photodiode with preamp G10342-14/-54 ROSA type, 1.3/1.55 m, 10 Gbps Features Applications l Compatible with 10 Gbps Miniature Device (XMD-MSA) l High-speed response: 11.3 Gbps l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output l Sensitivity: +3 to -20.5 dBm l High trans-impedance gain: 6 k l Low optical return loss: 35 dB Typ. l Isolation type: Housing and signal ground are electrically isolated. l Flex board interface (G10342-54) s Absolute maximum ratings Parameter Supply voltage Reverse voltage (photodiode) Storage temperature *1 Symbol Vcc VR Tstg l SDH/SONET (STM-64/OC-192) l 10 Gigabit Ethernet l XFP transceiver Value -0.5, +3.7 7 -40 to +90 Unit V V °C s Recommended operating conditions Parameter Case temperature * 1 Supply voltage Reverse voltage (photodiode) Spectral response range Load resistance *2 Bit rate Bit pattern *1: No condensation *2: Capacitive coupling Symbol Tc Vcc Vpd λ RL Value -20 to 90 3.05 to 3.53 3.05 to 5.0 1.26 to 1.57 50 9 to 11.1 NRZ, Mark ratio=1/2 Unit °C V V m Gbps - s Electrical and optical characteristics (recommended operating conditions, unless otherwise noted) Parameter Responsivity Supply current Cut-off frequency Low cut-off frequency Noise equivalent power *3 Trans-impedance *3 Minimum receivable sensitivity Maximum receivable sensitivity Output amplitude Dark current Symbol R Icc fc fc-L NEP Tz Pmin Pmax Vomax ID Conditions λ =1.31 m λ =1.55 m Dark state, R L= ∞ λ =1.55 m, -3 dB λ =1.55 m,……
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器件名 功能描述 生产厂商
G10342-54 InGaAs PIN photodiode with preamp HAMAMATSU
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