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G10518-51

器件名称: G10518-51
功能描述: InGaAs PIN photodiode with preamp
文件大小: 311.24KB 共2页
生产厂商: HAMAMATSU
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简  介: PHOTODIODE InGaAs PIN photodiode with preamp G10518-51/-54 ROSA type, 1.3 m, 10 Gbps Features Applications l φ1.25 mm (G10518-54)/ φ2.5 mm (G10518-51) sleeve type ROSA (Receiver Optical Sub-Assembly) l High-speed response: 10.7 Gbps l Low power supply voltage: Vcc=Vpd=3.3 V l Differential output l Sensitivity: +3 to -19.5 dBm Typ. l Trans-impedance: 6 k Typ. (single-ended) l SDH/SONET, 10 gigabit ethernet l Optical fiber communications s Absolute maximum ratings (Ta=25 °C) Parameter Supply voltage Reverse voltage (photodiode) Operating temperature (case temperature) Storage temperature Symbol Vcc VR Topr Tstg Value -0.5 Min, +3.7 Max 7 -20 to +85 -40 to +85 Unit V V °C °C s Electrical and optical characteristics (Ta=25 °C, Vcc=3.05 to 3.53 V, Vpd=3.05 to 5.0 V, RL=50 *2, unless otherwise noted) Parameter Responsivity Supply current Cut-off frequency Low cut-off frequency Noise equivalent power *1 Trans-impedance *1 Minimum receivable sensitivity Maximum receivable sensitivity Symbol R Icc fc fc-L NEP Tz Pmin Pmax Condition λ=1.31 m Dark state, RL=∞ λ=1.31 m, -3 dB λ=1.31 m, -3 dB Dark state, DC to 7.5 GHz f=100 MHz 10 Gbps, NRZ, λ=1.31 m PRBS=231-1, BER=10-12 Extinction ratio=14 dB Dark state, RL=∞ λ=1.31 m Min. 0.70 6.5 4 +2 300 12 Typ. 0.80 32 8.0 10 1.1 6 -19.5 +3 450 0.05 14 Max. 45 50 2.2 -17.5 650 0.5 Unit A/W mA GHz kHz Wrms k dBm dBm mVpp nA dB Output amplitude Vomax Dark current ID Optical return loss ORL *1: Single-ended (Vout+) measurement *2: Capacitive co……
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G10518-51 InGaAs PIN photodiode with preamp HAMAMATSU
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