器件名称:
G1737
功能描述:
GaAsP photodiode
文件大小:
176.32KB 共4页
简 介:
PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification s General ratings / Absolute maximum ratings Type No. G1735 G1736 G1737 G1738 G1740 G3297 Dimensional outline/ Window material * /K /K /K /R /R /L Package TO-18 TO-5 TO-8 Ceramic Ceramic TO-18 Active area size (mm) 1.3 × 1.3 2.7 × 2.7 5.6 × 5.6 1.3 × 1.3 5.6 × 5.6 1.3 × 1.3 Effective active area (mm2) 1.66 7.26 29.3 1.66 29.3 1.66 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 5 -30 to +80 -40 to +85 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Terminal Temp. Rise time Dark Short circuit capacitance coefficient tr current current Ct of VR=0 V Isc ID VR=0 V ID Type No. Max. x RL=1 k GaP He-Ne 100 l TCID f=10 kHz LED laser λp 560 nm 633 nm Min. Typ. V4=10 mV V4=1 V (nm) (nm) (pF) (A) (A) (pA) (pA) (times/°C) (s) G1735 0.2 0.25 2 20 0.5 250 G1736 0.8 1.1 5 50 1.8 1200 G1737 4 5 10 100 10 4500 0.4 0.22 0.29 1.07 400 to 760 710 G1738 0.2 0.25 2 20 0.5 250 G1740 4 5 10 100 10 4500 G3297 1.5 1.8 2 20 0.5 250 * Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating Spectral Peak response sensitivity range wavelength λ λp Photo sensitivity S (A/W) Shunt resistance Rsh VR=10 mV NEP Min. Typ. (G) (G) (W/Hz1/2) 5 25 2.0 × 10-15 2 15 3.……
