器件名称:
G1961
功能描述:
GaP photodiode
文件大小:
158.17KB 共4页
简 介:
PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection s General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/ Window material /Q * /Q /Q Package TO-18 TO-5 TO-8 Active area size (mm) 1.1 × 1.1 2.3 × 2.3 4.6 × 4.6 Effective active area (mm2) 1.0 5.2 21 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) 5 -10 to +60 -20 to +70 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral Peak response sensitivity range wavelength λ λp (nm) (nm) Photo sensitivity S (A/W) Short circuit current Isc lx Dark current ID Max. Terminal Temp. Rise time Shunt capacitance coefficient tr resistance Ct of VR=0 V Rsh VR=0 V ID VR=10 mV RL=1 k TCID f=10 kHz (s) 5 10 30 NEP Type No. G1961 G1962 190 to 550 440 G1963 * Window material Q: quartz glass Hg line 400 nm Min. 254 nm (A) 0.04 0.12 0.03 0.1 0.23 0.75 λp Typ. V4=10 mV (A) (pA) 0.05 2.5 0.3 5 0.9 10 V4=1 V (pA) (times/°C) 25 50 1.11 100 Min. Typ. (pF) (G) (G) (W/Hz1/2) 400 4 40 5.4 × 10-15 1500 2 20 7.6 × 10-15 5000 1 1 1.1 × 10-14 GaP photodiode sSpectral response 0.2 (Typ. Ta=25 C) +1.5 G1961, G1962, G1963 sPhoto sensitivity temperature characteristic (Typ.) 0.15 TEMPERATURE COEFFICIENT (%/C) PHOTO SENSITIVITY (A/W) +1.0 0.1 +0.5 0.05 0 0 190 400 600 800 -0.5 190 400 600 ……
