器件名称:
IRL630S
功能描述:
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
文件大小:
352.22KB 共8页
简 介:
PD - 9.1254 IRL630S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(ON) Specified at VGS = 4V & 5V 150°C Operating Temperature Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. VDSS = 200V RDS(on) = 0.40 ID = 9.0A SMD-220 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 25°C Continuous Drain Current, VGS @ 5.0V Continuous Drain Current, VGS @ 5.0V Pulsed Drain Current Power Dissipation Power Dissipation (PCB Mount)** Linear Derating Factor Linear Derating Factor (PCB Mount)** Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 9.0 5.7 36 74 3.1 0.59 0.025 ±10 250 9.0 7.4 5.0 -55 to + 150 300 (1.6mm from case) Units A W W/°C V mJ A mJ V/ns °C VGS EAS IAR EAR dv/dt T……
