器件名称:
H05N50
功能描述:
N-CHANNEL POWER MOSFET
文件大小:
48.44KB 共4页
简 介:
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200601 Issued Date : 2006.02.01 Revised Date : 2006.02.20 Page No. : 1/4 H05N50 Series N-CHANNEL POWER MOSFET H05N50 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. 2 3 1 Features Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements 1 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source 3 2 Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. Value TO-220AB TO-220FP 62 1.71 3.3 Units °C/W °C/W H05N50 Series Symbol D G S Absolute Maximum Ratings Symbol VDSS ID IDM VGS Drain-Source Voltage Drain to Current (Continuous) Drain to Current (Pulsed) (*1) Gate-to-Source Voltage (Continue) Total Power Dissipation TO-220AB TO-220FP Derate above 25°C TO-220AB TO-220FP Single Pulse Avalanche Energy (*2) Avalanche Current (*1) Repetitive Avalanche Energy (*1) Peak Diode Recovery (*3) Operating Temperature Range Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds Parameter Value 500 5 20 ±30 80 38 0.59 0.3 300 5 7.4 5 -55 to 150 -55 to 150 300 Units V A A V W PD W/°C mJ A mJ V/n……
