器件名称:
H05N60E
功能描述:
N-Channel Power Field Effect Transistor
文件大小:
60.77KB 共5页
简 介:
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H05N60 Series N-Channel Power Field Effect Transistor H05N60 Series Pin Assignment Tab Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits. 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Features Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H05N60 Series Symbol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25oC) H05N60E (TO-220AB) PD H05N60F (TO-220FP) Derate above 25°C H05N60E (TO-220AB) H05N60F (TO-220FP) Tj, Tstg EAS TL Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C (VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25) Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 0.56 0.2 -55 to 150 250 260 °C mJ °C W/°C 75 35 W Value 5 20 ±30 Un……
