器件名称:
H08N02CTS
功能描述:
Dual N-Channel Enhancement-Mode MOSFET (20V, 8A)
文件大小:
42.08KB 共4页
简 介:
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200611 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 1/4 H08N02CTS Dual N-Channel Enhancement-Mode MOSFET (20V, 8A) 8 7 6 5 8-Lead Plastic TSSOP-8 Package Code: TS H08N02CTS Symbol & Pin Assignment Features RDS(on)<30m@VGS=2.5V, ID=5.5A RDS(on)<20m@VGS=4.5V, ID=6.5A High Density Cell Design for Ultra Low On-Resistance High Power and Current Handing Capability Fully Characterized Avalanche Voltage and Current Ideal for Li ion Battery Pack Applications Q2 Q1 1 2 3 4 Pin 1: Drain Pin 2 / 3: Source 1 Pin 4: Gate 1 Pin 5: Gate 2 Pin 6 / 7: Source 2 Pin 8: Drain Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Parameter Ratings 20 ±12 8 30 Units V V A A W W °C °C/W Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75 C Operating and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) *2 o o 1.5 0.96 -55 to +150 83 *1: Maximum DC current limited by the package under the ambient condition at room temperature. *2: 1-in2 2oz Cu PCB board H08N02CTS HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Static BVDSS RDS(on) VGS(th) IDSS IGSS gFS Dynamic Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge……
