器件名称:
GWM160-0055P3
功能描述:
Three phase full bridge with Trench MOSFETs in DCB isolated high current package
文件大小:
79.48KB 共3页
简 介:
GWM 160-0055P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5 VDSS = 55 V = 160 A ID25 RDSon typ. = 2.3 m MOSFETs Symbol VDSS VGS ID25 ID90 IF25 IF90 TC = 25°C TC = 90°C TC = 25°C (diode) TC = 90°C (diode) Conditions TVJ = 25°C to 150°C Maximum Ratings 55 ±20 160 120 135 90 V V A A A A Applications AC drives in automobiles - electric power steering - starter generator in industrial vehicles - propulsion drives - fork lift drives in battery supplied equipment Features MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 86 18 25 25 50 70 40 0.9 100 1.7 1.4 2.3 3.8 2.9 m m 4 1 V A mA A nC nC nC ns ns ns ns V ns 0.85 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF t rr RthJC RthJH on chip level at VGS = 10 V VDS = 20 V; ID = 1 mA VDS = VDSS; VGS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 44 V; ID = 25 A VGS= 10 V; VDS = 30 V; ID = 25 A; RG = 10 (diode) IF = 80 A; VGS= 0 V (diode) IF = 20 A; -di/dt = 100 A/s; VDS = 30 V with heat transfer paste IXYS reserve……
