器件名称:
IRFW540A
功能描述:
Advanced Power MOSFET
文件大小:
232.82KB 共7页
简 介:
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperature n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.041 Ω (Typ.) IRFW/I540A BVDSS = 100 V RDS(on) = 0.052 Ω ID = 28 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25℃) * Total Power Dissipation (TC=25℃) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds ② ① ① ③ ① Value 100 28 19.8 110 ±20 523 28 10.7 6.5 3.8 107 0.71 - 55 to +175 Units V A A V mJ A mJ V/ns W W W/℃ ℃ 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 1.4 40 62.5 ℃/W Units * When mounted on the minimum pad size recommended (PCB Mount). Rev. B1 2001 Fairchild Semiconductor Corporation 1 IRFW/I540A Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakd……
