器件名称:
IRFW820A
功能描述:
Advanced Power MOSFET
文件大小:
229.29KB 共7页
简 介:
$GYDQFHG 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 500V Lower RDS(ON): 2.000 (Typ.) IRFW/I820A BVDSS = 500 V RDS(on) = 3.0 ID = 2.5 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds (2) (1) (1) (3) (1) Value 500 2.5 1.6 8 ±30 208 2.5 4.9 3.5 3.1 49 0.39 - 55 to +150 Units V A A V mJ A mJ V/ns W W W/°C °C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 2.57 40 62.5 °C/W Units * When mounted on the minimum pad size recommended (PCB Mount). Rev. B 1999 Fairchild Semiconductor Corporation IRFW/I820A Electrical Characteristics (TC=25°C unless otherwise specified) Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Sour……
