器件名称:
IRFWI740A
功能描述:
Advanced Power MOSFET
文件大小:
233.1KB 共7页
简 介:
Advanced Power MOSFET FEATURES s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s 175℃ Operating Temperature s Lower Leakage Current : 10 μA (Max.) @ VDS = 100V s Lower RDS(ON) : 0.176 Ω (Typ.) IRLW/I520A BVDSS = 100 V RDS(on) = 0.22 Ω ID = 9.2 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current (TC=100℃) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25℃) * Total Power Dissipation (TC=25℃) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds ② ① ① ③ ① Value 100 9.2 6.5 32 ±20 112 9.2 4.9 6.5 3.8 49 0.33 - 55 to +175 Units V A A V mJ A mJ V/ns W W W/℃ ℃ 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 3.04 40 62.5 ℃/W Units * When mounted on the minimum pad size recommended (PCB Mount). 1 IRLW/I520A Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Characteristic Min. Typ. Max. Units 100 -1.0 -----------------0.1 ------7.7 90 39 5 10 19 9 10.2 1.7 6.0 --2.0 100 -100 10 100 0.22……
