器件名称:
IRL1104S
功能描述:
Advanced Process Technology Logic-Level Gate Drive
文件大小:
194.25KB 共10页
简 介:
PD -91840 PRELIMINARY l l l l l l l IRL1104S/L HEXFET Power MOSFET D Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL1104S) Low-profile through-hole (IRL1104L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 40V RDS(on) = 0.008 G ID = 104A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1104L) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanc……
