器件名称: IRL2203NLPBF
功能描述: HEXFET
文件大小: 231.35KB 共11页
简 介:PD - 95219
IRL2203NSPbF IRL2203NLPbF
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Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested Lead-Free
HEXFET Power MOSFET
D
VDSS = 30V RDS(on) = 7.0m
G S
ID = 116A
Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak IRL2203NS
TO-262 IRL2203NL
Absolute Maximum Ratings
Symbol Parameter Max
116 82 400 3.8 180 1.2 ± 16 60 18 5.0 -55 to + 175 300 (1.6mm from case) A W W W/°C V A mJ V/ns °C
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM PD @TA = 25°C Power Dissipati……
