器件名称:
IRL2310
功能描述:
HEXFET Power MOSFET
文件大小:
130.56KB 共4页
简 介:
PD - 9.1275 PRELIMINARY IRL2310 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at V GS= 4.5V & 10V 175°C Operating Temperature Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of application. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. VDSS = 100V RDS(on) = 0.040 ID = 40A Absolute Maximum Ratings Parameter ID @ T C = 25°C ID @ T C = 100°C IDM PD @T C = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, V GS @ 5.0V Continuous Drain Current, V GS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 40 29 160 170 1.1 ±20 500 24 17 5.5 -55 to + 175……
