器件名称:
IRL3302PBF
功能描述:
HEXFET Power MOSFET
文件大小:
138.82KB 共8页
简 介:
PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS(on) = 0.020 G S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ID = 39A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 39 25 160 57 0.45 ± 10 14 130 23 5.7 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V mJ A mJ V/ns °C Thermal Re……
