器件名称:
IRL3502
功能描述:
HEXFET Power MOSFET
文件大小:
172.7KB 共7页
简 介:
PD - 94879 IRL3502PbF HEXFET Power MOSFET l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free D VDSS = 20V RDS(on) = 0.007 G S Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. ID = 110A TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS VGSM EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 5.0V Continuous Drain Current, VGS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage (Start Up Transient, tp = 100s) Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 110 67 420 140 1.1 ± 10 14 390 64 14 5.0 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/°C V V mJ A mJ V/ns °C Thermal Res……
