器件名称:
IRL530PBF
功能描述:
HEXFET
文件大小:
250.43KB 共8页
简 介:
PD - 95452 IRL530PbF Lead-Free www.irf.com 1 6/23/04 IRL530PbF 2 www.irf.com IRL530PbF www.irf.com 3 IRL530PbF 4 www.irf.com IRL530PbF www.irf.com 5 IRL530PbF 6 www.irf.com IRL530PbF D.U.T + + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance - - + RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" + - V DD Fig. 14. Peak Diode Recovery dv/dt Test Circuit Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 15. For N-Channel Power MOSFETs www.irf.com 7 IRL530PbF TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) Dimensions are shown in millimeters (inches) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M B A M 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCIN……
