器件名称:
IRLBA3803
功能描述:
HEXFET Power MOSFET
文件大小:
120.61KB 共8页
简 介:
PD - 91841C IRLBA3803 HEXFET Power MOSFET ● ● ● ● ● ● Logic-Level Gate Drive Advanced Process Technology 175°C Operating Temperature Fast Switching Fully Avalanche Rated Purchase IRLBA3803/P for solder plated option. D VDSS = 30V RDS(on) = 0.005 G ID = 179AV Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Super-220 is a package that has been designed to have the same mechanical outline and pinout as the industry standard TO-220 but can house a considerably larger silicon die. It has increased current handling capability over both the TO-220 and the much larger TO-247 package. This makes it ideal to reduce component count in multiparalled TO-220 applications, reduce system power dissipation, upgrade existing designs or have TO-247 performance in a TO-220 outline. This package has also been designed to meet automotive qualification standard Q101. S Super - 220 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Q Power Dissipation Linear Derating Factor Gate-to-Sou……
